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| SUD35N05-26L New Product Vishay Siliconix N-Channel 55-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 55 FEATURES ID (A)a 35 30 rDS(on) (W) 0.020 @ VGS = 10 V 0.026 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 175_C Rated Maximum Junction Temperature D Low Input Capacitance APPLICATIONS D Automotive Fuel Injection Systems D Automotive Wipers D Automotive Door Modules D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD35N05-26L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TC = 25_C TC = 100_C ID IDM IS Symbol VDS VGS Limit 55 "20 35 25 80 35 50c 7.5b -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambientb Junction-to-Case Junction-to-Lead Notes a. Package Limited. b. Surface Mounted on 1" x1" FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. Document Number: 71443 S-03485--Rev. A,16-Apr-01 www.vishay.com Steady State RthJA RthJC RthJL Symbol Typical 17 50 2.5 5.0 Maximum 20 60 3.0 6.0 Unit _C/W _ 1 SUD35N05-26L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 44 V, VGS = 0 V VDS = 44 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 5 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 15 A Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 0.0215 25 35 0.0165 0.020 0.035 0.026 S W 55 V 1 "100 1 50 nA mA m A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 25 V, RL = 0.3 W ID ^ 35 A, VGEN = 10 V, RG = 2.5 W VDS = 25 V, VGS = 5 V, ID = 35 A VGS = 0 V, VDS = 25 V, F = 1 MHz 885 185 80 10.5 4 4.8 5 18 20 100 8 30 30 150 ns 13 nC pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Continuous Current Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time IS ISM VSD trr IF = 80 A, VGS = 0 V IF = 35 A, di/dt = 100 A/ms 25 35 A 80 1.5 40 V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71443 S-03485--Rev. A,16-Apr-01 SUD35N05-26L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 6 V TC = -55_C 80 I D - Drain Current (A) 5V I D - Drain Current (A) 80 25_C 60 125_C 100 Vishay Siliconix Transfer Characteristics 60 4V 40 40 20 2V 0 0 2 4 6 8 10 3V 20 0 0 1 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 60 TC = -55_C 50 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) 0.03 25_C 125_C 0.04 On-Resistance vs. Drain Current 40 VGS = 4.5 V VGS = 10 V 0.02 30 20 0.01 10 0 0 20 40 60 80 100 0.00 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 1500 20 Gate Charge 1200 C - Capacitance (pF) Ciss 900 V GS - Gate-to-Source Voltage (V) 16 VDS = 25 V ID = 35 A 12 600 8 300 Coss Crss 0 11 22 33 44 55 4 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71443 S-03485--Rev. A,16-Apr-01 www.vishay.com 3 SUD35N05-26L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 20 A r DS(on)- On-Resistance ( W ) (Normalized) 1.6 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 TJ = 175_C 10 TJ = 25_C 0.8 0.4 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 40 500 Limited by rDS(on) 100 30 I D - Drain Current (A) I D - Drain Current (A) 10 ms 100 ms 10 10 ms 100 ms 1 TC = 25_C Single Pulse 1s dc Safe Operating Area 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71443 S-03485--Rev. A,16-Apr-01 1 10 30 4 |
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